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MITSUBISHI HVIGBT MODULES
CM1200DB-34N
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
CM1200DB-34N
q IC ................................................................ 1200A q VCES ....................................................... 1700V q Insulated Type q 2-element in a Pack q Cu Baseplate q Trench Gate IGBT : CSTBTTM q Soft Reverse Recovery Diode
APPLICATION Motor control, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
1300.5 570.25 570.25 4 - M8 NUTS Dimensions in mm
4(E1)
2(C2) C2
200.1
E1
4
2
G1
1240.25
1400.5
G2 C1 3(C1) 1(E2) E2
3
1
300.2
E1 G1 C1 C2 G2
E2
CIRCUIT DIAGRAM
6 - M4 NUTS
530.2
160.2 180.2 400.2 440.2 570.2
6 - 7 MOUNTING HOLES
55.20.3
screwing depth min. 7.7
11.850.2
screwing depth min. 16.5
50.2 350.2 11.50.2 140.2
38 +1 -0
LABEL
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
29.50.5
50.2
28 +1 -0
MITSUBISHI HVIGBT MODULES
CM1200DB-34N
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
MAXIMUM RATINGS
Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Top Tstg Viso tpsc Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum power dissipation Junction temperature Operating temperature Storage temperature Isolation voltage Maximum short circuit pulse width VGE = 0V, Tj = 25C VCE = 0V, Tj = 25C TC = 80C Pulse Pulse TC = 25C, IGBT part Conditions Ratings 1700 20 1200 2400 1200 2400 6900 -40 ~ +150 -40 ~ +125 -40 ~ +125 4000 10 Unit V V A A A A W C C C V s
(Note 1) (Note 1)
RMS, sinusoidal, f = 60Hz, t = 1min. VCC = 1200V, VCES 1700V, VGE = 15V Tj = 125C
ELECTRICAL CHARACTERISTICS
Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres Qg VEC (Note 2) td(on) tr Eon td(off) tf Eoff trr (Note 2) Irr (Note 2) Qrr (Note 2) Erec(Note 2)
Note 1. 2. 3. 4.
Item Collector cut-off current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Emitter-collector voltage Turn-on delay time Turn-on rise time Turn-on switching energy Turn-off delay time Turn-off fall time Turn-off switching energy Reverse recovery time Reverse recovery current Reverse recovery charge Reverse recovery energy
Conditions VCE = VCES, VGE = 0V, Tj = 25C IC = 120mA, VCE = 10V, Tj = 25C VGE = VGES, VCE = 0V, Tj = 25C IC = 1200A, VGE = 15V, Tj = 25C IC = 1200A, VGE = 15V, Tj = 125C VCE = 10V, f = 100kHz VGE = 0V, Tj = 25C VCC = 850V, IC = 1200A, VGE = 15V, Tj = 25C IE = 1200A, VGE = 0V, Tj = 25C (Note 4) IE = 1200A, VGE = 0V, Tj = 125C (Note 4) VCC = 850V, IC = 1200A, VGE = 15V RG(on) = 1.3, Tj = 125C, Ls = 150nH Inductive load VCC = 850V, IC = 1200A, VGE = 15V RG(off) = 3.3, Tj = 125C, Ls = 150nH Inductive load VCC = 850V, IC = 1200A, VGE = 15V RG(on) = 1.3, Tj = 125C, Ls = 150nH Inductive load
Min -- 6.0 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- --
Limits Typ -- 7.0 -- 2.15 2.40 176 9.6 2.8 6.8 2.60 2.30 1.00 0.40 380 1.20 0.30 360 1.00 560 300 220
Max 4 8.0 0.5 2.80 -- -- -- -- -- 3.30 -- -- -- -- -- -- -- -- -- -- --
Unit mA V A V nF nF nF C V s s mJ/pulse s s mJ/pulse s A C mJ/pulse
(Note 4) (Note 4)
Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125C). The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). Junction temperature (Tj) should not exceed Tjmax rating (150C). Pulse width and repetition rate should be such as to cause negligible temperature rise.
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1200DB-34N
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
THERMAL CHARACTERISTICS
Symbol Rth(j-c)Q Rth(j-c)R Rth(c-f) Item Thermal resistance Contact thermal resistance Conditions Junction to Case, IGBT part, 1/2 module Junction to Case, FWDi part, 1/2 module Case to Fin, grease = 1W/m*K, 1/2 module Min -- -- -- Limits Typ -- -- 16.0 Max 18.0 40.0 -- Unit K/kW K/kW K/kW
MECHANICAL CHARACTERISTICS
Symbol Item Conditions M8 : Main terminals screw M6 : Mounting screw M4 : Auxiliary terminals screw Min 7.0 3.0 1.0 -- 600 9.5 15.0 -- -- Limits Typ -- -- -- 1.3 -- -- -- 30 0.28 Max 20.0 6.0 3.0 -- -- -- -- -- -- Unit
M -- CTI da ds LC-E(int) RC-E(int)
Mounting torque Mass Comparative tracking index Clearance distance in air Creepage distance along surface Internal inductance Internal lead resistance
N*m kg -- mm mm nH m
IGBT part TC = 25C
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1200DB-34N
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS (TYPICAL) 2400 Tj = 125C 2000 VGE = 15V VGE = 12V 2000 2400
TRANSFER CHARACTERISTICS (TYPICAL) VCE = 20V
COLLECTOR CURRENT (A)
1600 VGE = 10V
COLLECTOR CURRENT (A)
VGE = 20V
1600
1200
1200
800
800
400 VGE = 8V 0 0 1 2 3 4 5 6
400 Tj = 25C Tj = 125C 0 0 2 4 6 8 10 12
COLLECTOR-EMITTER VOLTAGE (V)
GATE-EMITTER VOLTAGE (V)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 5
COLLECTOR-EMITTER SATURATION VOLTAGE (V)
5 VGE = 15V
4
EMITTER-COLLECTOR VOLTAGE (V)
Tj = 25C Tj = 125C
4
3
3
2
2
1
1 Tj = 25C Tj = 125C 0 0 400 800 1200 1600 2000 2400
0
0
400
800
1200
1600
2000
2400
COLLECTOR CURRENT (A)
EMITTER CURRENT (A)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1200DB-34N
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
CAPACITANCE CHARACTERISTICS (TYPICAL) 103
7 5 3 2
GATE CHARGE CHARACTERISTICS (TYPICAL) 20 VCC = 850V, IC = 1200A Tj = 25C
CAPACITANCE (nF)
102
7 5 3 2
GATE-EMITTER VOLTAGE (V)
5 7 102
Cies
16
12
8
101
7 5 3 2
Coes
4
100 -1 10
VGE = 0V, Tj = 25C f = 100kHz
23 5 7 100 23 5 7 101
Cres
23
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE (V)
GATE CHARGE (C)
HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 1200 VCC = 850V, VGE = 15V RG(on) = 1.3, RG(off) = 3.3 Tj = 125C, Inductive load 2000 Eon SWITCHING ENERGIES (mJ/pulse) 1600
HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) VCC = 850V, IC = 1200A VGE = 15V Tj = 125C, Inductive load
SWITCHING ENERGIES (mJ/pulse)
1000
Eon
800
Eoff
1200
600
800 Eoff 400 Erec
400 Erec 200
0
0
400
800
1200
1600
2000
2400
0
0
2
4
6
8
10
12
COLLECTOR CURRENT (A)
GATE RESISTANCE ()
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1200DB-34N
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 101
7 5 3 2
FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 500 VCC = 850V, VGE = 15V RG(on) = 1.3 Tj = 125C, Inductive load
REVERSE RECOVERY CHARGE (C)
VCC = 850V, VGE = 15V RG(on) = 1.3, RG(off) = 3.3 Tj = 125C, Inductive load
400 Qrr 300
SWITCHING TIMES (s)
td(off) 100
7 5 3 2
td(on)
tr tf
200
10-1
7 5 3 2
100
10-2 2 10
2
3
5
7 103
2
3
5
7 104
0
0
400
800
1200
1600
2000
2400
COLLECTOR CURRENT (A)
EMITTER CURRENT (A)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS
REVERSE BIAS SAFE OPERATING AREA (RBSOA) 3000 VCC 1200V, VGE = +/-15V Tj = 125C, RG(off) 3.3
NORMALIZED TRANSIENT THERMAL IMPEDANCE
1.2 Single Pulse, TC = 25C Rth(j-c)Q = 18K/kW Rth(j-c)R = 40K/kW
1.0
2500
COLLECTOR CURRENT (A)
0.8
2000
0.6
1500
0.4
1000
0.2
500 Module Chip
0 -3 10 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 2 3 5 7 101 TIME (s)
0
0
500
1000
1500
2000
COLLECTOR-EMITTER VOLTAGE (V)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005

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